2013/05/06 by Pablo Stoliar, Laurent Cario, Etienne Janod +10
Computer Science · Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Electronic and Structural Properties of Oxides #Nonlinear Dynamics and Pattern Formation #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1002/adma.201301113
published as Advanced Materials 25, 23 (2013) 3222-3226
openalex publication_date 2013/05/06 · arxiv created 2013/09/20 · arxiv updated 2013/09/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.