2012/11/26 by D. Stornaiuolo, S. Gariglio, N. J. G. Couto +8 · 61 citations
Materials Science · Physics and Astronomy · #Characterization (materials science) #Chemical and Physical Properties of Materials #Conductance #Electric field #Electron-beam lithography #Electronic and Structural Properties of Oxides #Fermi gas #Mesoscopic physics #Nanostructure #Quantum and electron transport phenomena #Quantum dot #Realization (probability) #Superconductivity #cond-mat.mes-hall #cond-mat.supr-con
paper · pdf · doi:10.1063/1.4768936
published in Applied Physics Letters 101(22) (American Institute of Physics) · 10 pages, 4 figures
openalex publication_date 2012/11/26 · arxiv created 2013/06/06 · arxiv updated 2013/06/07 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO3/SrTiO3 interface. Bridges with lateral dimensions down to 500 nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO3/SrTiO3 interface.