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Weak localization and spin-orbit interaction in side-gate field effect devices at theLaAlO3/SrTiO3interface

2014/12/16 by D. Stornaiuolo, Stefano Gariglio, S. Gariglio +7 · 56 citations
Materials Science · Mathematics · Physics and Astronomy · #Advanced Condensed Matter Physics #Condensed matter physics #Doping #Electronic and Structural Properties of Oxides #Field (mathematics) #Magnetic and transport properties of perovskites and related materials #Mathematics #Orbit (dynamics) #Phase (matter) #Phase diagram #Physics #Quantum mechanics #Scattering #Spin (aerodynamics) #Spin–orbit interaction #Superconductivity #cond-mat.mes-hall

paper · pdf · open access · doi:10.1103/physrevb.90.235426

published in Physical Review B 90(23) (American Physical Society)

openalex publication_date 2014/12/16 · arxiv created 2015/03/19 · arxiv updated 2015/03/20 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

Using field effect devices with side gates, we modulate the 2-dimensional electron gas hosted at the LaAlO3/SrTiO3 interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies. We find that the spin-orbit interaction strongly affects the low-temperature transport in the normal state in a very large region of the phase diagram, extending beyond the superconducting dome.

Citations