2009/02/19 by Cheng Cen, Stefan Thiel, J. Mannhart +1 · 1 citation
Engineering · Materials Science · #Electronic and Structural Properties of Oxides #Nanowire Synthesis and Applications #Semiconductor materials and devices
paper · doi:10.1126/science.1168294
openalex publication_date 2009/02/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/23
Electronic confinement at nanoscale dimensions remains a central means of science and technology. We demonstrate nanoscale lateral confinement of a quasi-two-dimensional electron gas at a lanthanum aluminate-strontium titanate interface. Control of this confinement using an atomic force microscope lithography technique enabled us to create tunnel junctions and field-effect transistors with characteristic dimensions as small as 2 nanometers. These electronic devices can be modified or erased without the need for complex lithographic procedures. Our on-demand nanoelectronics fabrication platform has the potential for widespread technological application.