Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

2012/11/01 by H. Nakayama, Hiroyasu Nakayama, Matthias Althammer +21 · 4 citations
Engineering · Materials Science · Physics and Astronomy · #Magnetic Properties and Applications #Magnetic properties of thin films #Magneto-Optical Properties and Applications #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.110.206601

published as Phys. Rev. Lett. 110, 206601 (2013) · 20 pages, 7 figures (including Supplemental Material)

arxiv created 2012/11/01 · openalex publication_date 2013/05/13 · arxiv updated 2013/05/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We report anisotropic magnetoresistance in Pt|Y₃Fe₅O₁₂ bilayers. In spite of Y₃Fe₅O₁₂ being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y₃Fe₅O₁₂, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it ``spin Hall magnetoresistance.''

Citations

• Review and Analysis of Measurements of the Spin Hall Effect in Platinum
• Observation of the Spin Hall Effect in Semiconductors
• Current-driven excitation of magnetic multilayers
• Nobel Lecture: Origin, development, and future of spintronics

Cited by

• Long-distance transport of magnon spin information in a magnetic insulator at room temperature
• Spin Hall Magnetoresistance in Metallic Bilayers
• Current-Induced Spin-Torque Resonance of Magnetic Insulators
• Self-current induced spin-orbit torque in FeMn/Pt multilayers