2011/11/28 by Pia Juliane Wessely, Frank Wessely, Emrah Birinci +3 · 21 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Bilayer #Bilayer graphene #CMOS #Chemical vapor deposition #Chemistry #Electrical engineering #Fabrication #Field-effect transistor #Graphene #Graphene and Nanomaterials Applications #Graphene nanoribbons #Graphene research and applications #Materials science #Membrane #Monolayer #Nanotechnology #Nanowire Synthesis and Applications #Optoelectronics #Silicon #Substrate (aquarium) #Transistor #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1016/j.physe.2011.12.022
published in Physica E Low-dimensional Systems and Nanostructures 44(7-8), 1132-1135 (Elsevier BV) · 16 pages, 4 figures
arxiv created 2011/11/28 · openalex publication_date 2011/12/30 · arxiv updated 2013/03/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer graphene layers. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios. In contrast, BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1E7. The complete fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment.