2005/01/28 by Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch +1 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Carbon nanotube #Carbon nanotube field-effect transistor #Electrical engineering #Engineering #Engineering physics #Field (mathematics) #Field-effect transistor #Graphene research and applications #Materials science #Nanoelectronics #Nanotechnology #Nanowire Synthesis and Applications #Optoelectronics #Physics #Transistor #Voltage #cond-mat.mtrl-sci
paper · pdf · doi:10.1109/tnano.2005.851427
published as IEEE Trans. Nanotechnology Vol. 4 (5), pp.481--489, 2005 · 26 pages, 12 figures, accepted for IEEE Trans. Nanotechnology
arxiv created 2005/01/28 · openalex publication_date 2005/09/01 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky-barrier-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance enhancement-mode CNFETs exhibiting n- or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-state performance and a steep subthreshold swing (S=63 mV/dec). The device design allows for aggressive oxide thickness and gate-length scaling while maintaining the desired device characteristics.