2013/01/22 by K. Zou, Ke Zou, Fan Zhang +5 · 3 citations
Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Band gap #Condensed matter physics #Electric field #Electron #Electronic band structure #Fermi level #Graphene #Graphene research and applications #Heterojunction #Materials science #Nanotechnology #Perpendicular #Physics #Quantum and electron transport phenomena #Semimetal #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1021/nl303375a
published as Nano Letters, 2013, 13 (2), pp 369 373
openalex publication_date 2013/01/22 · arxiv created 2013/02/14 · arxiv updated 2013/02/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report on the transport properties of ABC and ABA stacked trilayer graphene using dual, locally gated field effect devices. The high efficiency and large breakdown voltage of the HfO(2) top and bottom gates enable independent tuning of the perpendicular electric field and the Fermi level over an unprecedentedly large range. We observe a resistance change of 6 orders of magnitude in the ABC trilayer, which demonstrates the opening of a band gap. Our data suggest that the gap saturates at a large displacement field of D ~ 3 V/nm, in agreement with self-consistent Hartree calculations. In contrast, the ABA trilayer remains metallic even under a large perpendicular electric field. Despite the absence of a band gap, the band structure of the ABA trilayer continues to evolve with increasing D. We observe signatures of two-band conduction at large D fields. Our self-consistent Hartree calculation reproduces many aspects of the experimental data but also points to the need for more sophisticated theory.