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Valley-selective topologically ordered states in irradiated bilayer graphene

2016/08/31 by Chunlei Qu, Chuanwei Zhang, Fan Zhang
Chemistry · Materials Science · Physics and Astronomy · #2D Materials and Applications #Bilayer #Bilayer graphene #Chemistry #Condensed matter physics #Graphene #Graphene research and applications #Irradiation #Materials science #Membrane #Nanotechnology #Physics #Quantum mechanics #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1088/2053-1583/aa9471

published as 2D Mater. 5, 011005 (2018) · published version, 7 pages, 3 figures

openalex created_date 2016/09/16 · openalex publication_date 2017/10/18 · arxiv created 2017/11/06 · arxiv updated 2017/11/08 · openalex updated_date 2026/08/06

Abstract

Abstract Gapless bilayer graphene is susceptible to a variety of spontaneously gapped states. As predicted by theory and observed by experiment, the ground state is, however, topologically trivial, because a valley-independent gap is energetically favorable. Here, we show that under the application of interlayer electric field and circularly polarized light, one valley can be selected to exhibit the original interaction instability while the other is frozen out. Tuning this Floquet system stabilizes multiple competing topologically ordered states, distinguishable by edge transport and circular dichroism. Notably, quantized charge, spin, and valley Hall conductivities coexist in one stabilized state.

Citations