Nonmonotonic Temperature-Dependent Resistance in Low Density 2D Hole Gases

1999/05/12 by A. P. Mills, A. P. Mills, Jr., A. P. Ramirez +2 · 71 citations
Physics and Astronomy · #Condensed matter physics #Crystallography #Physics #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Quantum mechanics #Scattering #Semiconductor Quantum Structures and Devices #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.83.2805

published in Physical Review Letters 83(14), 2805-2808 (American Physical Society)

arxiv created 1999/05/12 · openalex publication_date 1999/10/04 · arxiv updated 2012/08/27 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

The low temperature longitudinal resistance-per-square R_xx(T) in ungated GaAs/Al_xGa_1\ensuremath-xAs quantum wells of high peak hole mobility 1.7\ifmmode×\else\texttimes\fi10⁶cm²V^\ensuremath-1s^\ensuremath-1 is metallic for 2D hole density p as low as 3.8\ifmmode×\else\texttimes\fi10⁹cm^\ensuremath-2. The electronic contribution to the resistance, R_el(T), is a nonmonotonic function of T, exhibiting thermal activation, R_el(T)\ensuremath∝exp(\ensuremath-E_a/kT), for kT\ensuremath≪E_F and a heretofore unnoted decay R_el(T)\ensuremath∝1/T for kT>E_F. The form of R_el(T) is independent of density, indicating a fundamental relationship between the low- and high- T scattering mechanisms in the metallic state.

Citations

• Wigner Crystallization and Metal-Insulator Transition of Two-Dimensional Holes in GaAs atB<mml:mspace/>=<mml:mspace/>0
• New Liquid Phase and Metal-Insulator Transition in Si MOSFETs
• Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions

Cited by

• Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems