New Liquid Phase and Metal-Insulator Transition in Si MOSFETs

1997/11/19 by Song He, X. C. Xie · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.dis-nn #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.80.3324

12 pages of RevTeX with 3 postscript figures

arxiv created 1997/11/19 · openalex publication_date 1998/04/13 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We argue that there is a new liquid phase in the two-dimensional electron system in Si MOSFETs at low enough electron densities. The recently observed metal-insulator transition results as a crossover from the percolation transition of the liquid phase through the disorder landscape in the system below the liquid-gas critical temperature. The consequences of our theory are discussed for variety of physical properties relevant to the recent experiments.

Citations

• Continuous Quantum Phase Transitions
• Coulomb gap and low temperature conductivity of disordered systems
• Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions

Cited by

• Resistance Noise Scaling in a Dilute Two-Dimensional Hole System in GaAs
• Linear temperature dependence of the conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition