2003/01/31 by R. Leturcq, Renaud Leturcq, D. L’Hôte +5
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.90.076402
4 pages, 4 figures, to be published in Phys. Rev. Lett
arxiv created 2003/02/13 · openalex publication_date 2003/02/19 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have measured the resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power S(R)/R(2) increases strongly when the hole density p(s) is decreased, increases slightly with temperature (T) at the largest densities, and decreases strongly with T at low p(s). The noise scales with the resistance, S(R)/R(2) approximately R2.4, as for a second order phase transition such as a percolation transition. The p(s) dependence of the conductivity is consistent with a critical behavior for such a transition, near a density p(*) which is lower than the observed MIT critical density p(c).