Wigner Crystallization and Metal-Insulator Transition of Two-Dimensional Holes in GaAs atB<mml:mspace/>=<mml:mspace/>0

1998/07/22 by Jongsoo Yoon, C. C. Li, D. Shahar +2 · 6 citations
Physics and Astronomy · #Magnetic properties of thin films #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #cond-mat

paper · pdf · doi:10.1103/physrevlett.82.1744

4 pages, 4 Postscript figures

arxiv created 1998/07/22 · openalex publication_date 1999/02/22 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of 7\ifmmode×\else\texttimes\fi10⁵cm²/Vs, with a hole density of 4.8\ifmmode×\else\texttimes\fi10⁹&lt;p&lt;3.72\ifmmode×\else\texttimes\fi10¹⁰cm^\ensuremath-2 in the temperature range of 50mK&lt;T&lt;1.3K. From their T, p, and electric field dependences, we find that the metal-insulator transition in zero magnetic field in this exceptionally clean 2DHS occurs at r_s\phantom\rule0ex0ex=\phantom\rule0ex0ex35.1\ifmmode±\else\textpm\fi0.9, which is in good agreement with the critical r_s for Wigner crystallization r_s^c\phantom\rule0ex0ex=\phantom\rule0ex0ex37\ifmmode±\else\textpm\fi5, predicted by Tanatar and Ceperley for an ideally clean 2D system.

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