2012/03/08 by Hongki Min, E. H. Hwang, S. Das Sarma · 16 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Atmospheric temperature range #Condensed matter physics #Electrical resistivity and conductivity #Impurity #Materials science #Optics #Phonon #Phonon scattering #Physics #Quantum and electron transport phenomena #Quantum mechanics #Saturation (graph theory) #Scattering #Semiconductor Quantum Structures and Devices #Thermodynamics #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.86.085307
published in Physical Review B 86(8) (American Physical Society) · 11 pages, 8 figures
arxiv created 2012/03/08 · openalex publication_date 2012/08/09 · arxiv updated 2012/08/15 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We investigate temperature-dependent transport properties of two-dimensional p-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing the hole mobility data of p-GaAs in the temperature range 10\phantom\rule4.pt0exK<T<100 K, we estimate the value of the appropriate deformation potential for hole-phonon coupling. Due to the interplay between hole-phonon and hole-impurity scattering the calculated temperature-dependent resistivity shows interesting nonmonotonic behavior. In particular, we find that there is a temperature range (typically 2\phantom\rule4.pt0exK<T<10 K) in which the calculated resistivity becomes independent of temperature due to a subtle cancellation between the temperature-dependent resistive scattering contributions arising from impurities and phonons. This resistivity saturation regime appears at low carrier densities when the increasing resistivity due to phonon scattering compensates for the decreasing resistivity due to the nondegeneracy effect. This temperature-independent flat resistivity regime is experimentally accessible and may have already been observed in a recent experiment.