Symmetry-dependent phonon renormalization in monolayer MoS<mml:mrow/>2transistor

2012/04/06 by Biswanath Chakraborty, Achintya Bera, D. V. S. Muthu +4 · 1,112 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Analytical Chemistry (journal) #Chemistry #Condensed matter physics #Doping #Graphene #Graphene research and applications #Materials science #Nanotechnology #Nanowire Synthesis and Applications #Optics #Optoelectronics #Phonon #Physics #Quantum mechanics #Raman scattering #Raman spectroscopy #Semiconductor #Spectroscopy #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.85.161403

published in Physical Review B 85(16) (American Physical Society) · 5 pages, 3 figures

openalex publication_date 2012/04/06 · arxiv created 2012/06/08 · arxiv updated 2012/06/11 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/06

Abstract

A strong electron-phonon interaction which limits the electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of doping in graphene-based devices. Using in situ Raman scattering from a single-layer MoS₂ electrochemically top-gated field-effect transistor (FET), we show softening and broadening of the A_1g phonon with electron doping, whereas the other Raman-active E_2g¹ mode remains essentially inert. Confirming these results with first-principles density functional theory based calculations, we use group theoretical arguments to explain why the A_1g mode specifically exhibits a strong sensitivity to electron doping. Our work opens up the use of Raman spectroscopy in probing the level of doping in single-layer MoS₂-based FETs, which have a high on-off ratio and are of technological significance.

Citations

• Gate-induced insulating state in bilayer graphene devices
• Phonon Anharmonicities in Graphite and Graphene
• Observation of Anomalous Phonon Softening in Bilayer Graphene
• Single-layer MoS2 transistors
• Self-interaction correction to density-functional approximations for many-electron systems
• Electric Field Effect in Atomically Thin Carbon Films
• Graphene nano-ribbon electronics
• Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
• QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

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