2010/12/31 by Jian Wang, Ashley M. DaSilva, Ashley DaSilva +8 · 6 citations
Materials Science · Physics and Astronomy · #Angle-resolved photoemission spectroscopy #Band gap #Condensed matter physics #Doping #Electron #Electronic and Structural Properties of Oxides #Electronic structure #Epitaxy #Fermi level #Graphene research and applications #Materials science #Molecular beam epitaxy #Nanotechnology #Physics #Quantum mechanics #Topological Materials and Phenomena #Topological insulator #Topology (electrical circuits) #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.83.245438
published as Physical Review B 83, 245538 (2011) · Submitted to Phys. Rev. B
arxiv created 2011/03/18 · openalex publication_date 2011/06/28 · arxiv updated 2012/01/20 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We consider in our work single crystal thin films of Bi2Se3, grown by molecular beam epitaxy, both with and without Pb doping. Angle-resolved photoemission data demonstrate topological surface states with a Fermi level lying inside the bulk band gap in the Pb-doped films. Transport data show weak localization behavior, as expected for a thin film in the two-dimensional limit (when the thickness is smaller than the inelastic mean free path), but a detailed analysis within the standard theoretical framework of diffusive transport shows that the temperature and magnetic field dependences of resistance cannot be reconciled in a theory that neglects inter-electron interactions. We demonstrate that an excellent account of quantum corrections to conductivity is achieved when both disorder and interaction are taken into account. These results clearly demonstrate that it is crucial to include electron-electron interaction for a comprehensive understanding of diffusive transport in topological insulators. While both the ordinary bulk and the topological surface states presumably participate in transport, our analysis does not allow a clear separation of the two contributions.