2011/07/31 by S. Wiedmann, H. J. van Elferen, E. V. Kurganova +12 · 1 citation
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Carbon Nanotubes in Composites #Chemistry #Condensed matter physics #Electron #Electron transport chain #Graphene #Graphene research and applications #Materials science #Nanotechnology #Physics #Quantum mechanics #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.84.115314
published as Phys. Rev. B 84, 115314 (2011) · 5 pages, 6 figures
openalex publication_date 2011/09/21 · arxiv created 2011/09/23 · arxiv updated 2011/09/26 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two-component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level, which implies a quantum Hall metal state at \ensuremathν=0 made up by both electrons and holes.