2007/08/31 by J. G. Checkelsky, Joseph G. Checkelsky, Lu Li +2 · 10 citations
Materials Science · Physics and Astronomy · #Graphene research and applications #Quantum and electron transport phenomena #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.100.206801
published as Phys. Rev. Lett. 100, 206801 (2008) · 4 pages, 4 figures. Four new sub-figures have been added. Text expanded to discuss data from more samples
arxiv created 2007/12/05 · openalex publication_date 2008/05/20 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The fate of the charge-neutral Dirac point in graphene in a high magnetic field H has been investigated at low temperatures (T approximately 0.3 K). In samples with small gate-voltage offset V0, the resistance R0 at the Dirac point diverges steeply with H, signaling a crossover to a state with a very large R0. The approach to this state is highly unusual. Despite the steep divergence in R0, the profile of R0 vs T in fixed H saturates to a T-independent value below 2 K, consistent with gapless charge-carrying excitations.