2007/05/15 by Rajib Rahman, Cameron J. Wellard, Cameron Wellard +6 · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Atomic physics #Condensed matter physics #Electric field #Hyperfine structure #Ionization #Physics #Quantum and electron transport phenomena #Quantum mechanics #Quantum-confined Stark effect #Semiconductor materials and devices #Spin (aerodynamics) #Spins #Stark effect #Work (physics) #quant-ph
paper · pdf · doi:10.1103/physrevlett.99.036403
published as Physical Review Letters 99, 036403 (2007) · 5 pages, 2 figures
arxiv created 2007/05/15 · openalex publication_date 2007/07/20 · arxiv updated 2010/11/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using tight-binding and band minima basis approaches and compared to the recent precision measurements. In contrast with previous effective mass-based results, the quadratic Stark coefficient obtained from both theories agrees closely with the experiments. It is also shown that there is a significant linear Stark effect for an impurity near the interface, whereas, far from the interface, the quadratic Stark effect dominates. This work represents the most sensitive and precise comparison between theory and experiment for single donor spin control. Such precise control of single donor spin states is required particularly in quantum computing applications of single donor electronics, which forms the driving motivation of this work.