Atomically Precise Placement of Single Dopants in Si

2003/07/24 by S. R. Schofield, Steven R. Schofield, N. J. Curson +9 · 3 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.91.136104

5 pages, 4 figures

arxiv created 2003/07/24 · openalex publication_date 2003/09/25 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04

Abstract

We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with approximately 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.

Citations

• Towards the fabrication of phosphorus qubits for a silicon quantum computer

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