2009/03/06 by Rajib Rahman, Seung H. Park, Jared H. Cole +4
Computer Science · Physics and Astronomy · #Adiabatic process #Electron #Electronic structure #Physics #Quantum #Quantum Information and Cryptography #Quantum and electron transport phenomena #Quantum computer #Quantum mechanics #Quantum simulator #Quantum tunnelling #Semiconductor Quantum Structures and Devices #Statistical physics #Stimulated Raman adiabatic passage #Tight binding #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.80.035302
published as Physical Review B 80, 035302 (2009) · 8 pages, 5 figures
arxiv created 2009/03/06 · openalex publication_date 2009/07/07 · arxiv updated 2010/11/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
A solid-state analog of stimulated Raman adiabatic passage can be implemented in a triple-well solid-state system to coherently transport an electron across the wells with exponentially suppressed occupation in the central well at any point of time. Termed coherent-tunneling adiabatic passage (CTAP), this method provides a robust way to transfer quantum information encoded in the electronic spin across a chain of quantum dots or donors. Using large-scale atomistic tight-binding simulations involving over 3.5\ifmmode×\else\texttimes\fi106 atoms, we verify the existence of a CTAP pathway in a realistic solid-state system: gated triple donors in silicon. Realistic gate profiles from commercial tools were combined with tight-binding methods to simulate gate control of the donor to donor tunnel barriers in the presence of crosstalk. As CTAP is an adiabatic protocol, it can be analyzed by solving the time-independent problem at various stages of the pulse justifying the use of time-independent tight-binding methods to this problem. This work also involves the first atomistic treatment to translate the three-state-based quantum-optics type of modeling into a solid-state description beyond the ideal localization assumption. Our results show that a three-donor CTAP transfer, with interdonor spacing of 15 nm can occur on time scales greater than 23 ps, well within experimentally accessible regimes. The method not only provides a tool to guide future CTAP experiments but also illuminates the possibility of system engineering to enhance control and transfer times.