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Interface structure of epitaxial graphene grown on 4H-SiC(0001)

2008/08/10 by Joanna Hass, J. Hass, J. E. Millán-Otoya +4
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Ab initio #Ab initio quantum chemistry methods #Advancements in Battery Materials #Bilayer #Bilayer graphene #Chemistry #Composite material #Condensed matter physics #Contact angle #Crystallography #Epitaxy #Graphene #Graphene nanoribbons #Graphene research and applications #Graphite #Interface (matter) #Layer (electronics) #Materials science #Membrane #Molecule #Nanotechnology #Physics #Surface and Thin Film Phenomena #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.78.205424

1 tex file plus 6 figures

arxiv created 2008/08/10 · openalex publication_date 2008/11/19 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer (\ensuremath∼1.7 \text\AA compared to 0.63 \text\AA). The distance from this interface layer to the first graphene sheet is much smaller than the graphite interlayer spacing but larger than the same distance measured for graphene grown on the (0001) surface, as predicted previously by ab initio calculations.

Citations