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Structural properties of the multilayer graphene/4H−SiC(0001¯)system as determined by surface x-ray diffraction

2007/02/23 by Joanna Hass, J. Hass, Rui Feng +11 · 4 citations
Chemistry · Engineering · Materials Science · Mathematics · Physics and Astronomy · #Ab initio #Advancements in Battery Materials #Chemistry #Condensed matter physics #Crystallography #Geometry #Graphene #Graphene research and applications #Materials science #Mathematics #Molecule #Nanotechnology #Physics #Quantum mechanics #Substrate (aquarium) #Surface (topology) #Surface and Thin Film Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci #van der Waals force

paper · pdf · doi:10.1103/physrevb.75.214109

9 pages with 6 figures

arxiv created 2007/02/23 · openalex publication_date 2007/06/18 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We present a structural analysis of the multilayer graphene/4HSiC(0001) system using surface x-ray reflectivity. We show that graphene films grown on the C-terminated (0001) surface have a graphene-substrate bond length that is very short (1.62\phantom\rule0.3em0ex\mathrm\AA). The measured distance rules out a weak van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab initio calculations. The measurements also indicate that multilayer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].

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