2007/12/31 by Xiaosong Wu, Mike Sprinkle, Xuebin Li +3
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Annealing (glass) #Band gap #Carbon Nanotubes in Composites #Chemistry #Composite material #Electrode #Epitaxy #Graphene #Graphene nanoribbons #Graphene oxide paper #Graphene research and applications #Materials science #Molecular Junctions and Nanostructures #Nanotechnology #Optoelectronics #Oxide #Schottky barrier #Schottky diode #Silicon #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.101.026801
published as Phys. Rev. Lett. 101, 026801 (2008) · 5 pages, 4 figures
arxiv created 2008/07/07 · openalex publication_date 2008/07/07 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.