2008/06/29 by K. V. Kavokin · 4 citations
Physics and Astronomy · #Magnetic properties of thin films #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1088/0268-1242/23/11/114009
Submitted to the special issue "Optical Orientation", Semiconductor Science and Technology
arxiv created 2008/06/29 · openalex publication_date 2008/10/29 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium angular momentum is shown to be limited either by hyperfine interaction, or by spin–orbit interaction in the course of exchange-induced spin diffusion. The energy relaxation time in the spin system is governed by phonon-assisted hops within pairs of donors with an optimal distance of about 4 Bohr radii. The spin correlation time of the donor-bound electron is determined either by exchange interaction with other localized electrons, or by spin-flip scattering of free conduction-band electrons. A possibility of optical cooling of the spin system of localized electrons is discussed.