2016/06/30 by M. Kotur, R. I. Dzhioev, M. Vladimirova +3 · 19 citations
Physics and Astronomy · #Atomic physics #Condensed matter physics #Hyperfine structure #Magnetic properties of thin films #Materials science #Physics #Quadrupole #Quantum and electron transport phenomena #Relaxation (psychology) #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #Spins #Thermodynamics #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.94.081201
published in Physical review. B./Physical review. B 94(8) (American Physical Society) · 5 pages, 4 figures
openalex created_date 2016/06/24 · arxiv created 2016/08/21 · openalex publication_date 2016/08/22 · arxiv updated 2016/08/31 · openalex updated_date 2026/08/06
We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n-GaAs bulk crystal.