2008/02/29 by Mikito Koshino
Materials Science · Physics and Astronomy · #Band gap #Bilayer graphene #Condensed matter physics #Delocalized electron #Electric field #Electron #Graphene #Graphene research and applications #Landau quantization #Magnetic field #Materials science #Phase transition #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.78.155411
published as Phys. Rev. B 78, 155411 (2008) · 6 pages, 6 figures
openalex publication_date 2008/10/09 · arxiv created 2009/01/16 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Electronic localization is numerically studied in disordered bilayer graphene with an electric-field-induced energy gap. Bilayer graphene is a zero-gap semiconductor, in which an energy gap can be opened and controlled by an external electric field perpendicular to the layer plane. We found that, in the smooth disorder potential not mixing the states in different valleys (K and K^\ensuremath' points), the gap opening causes a phase transition at which the electronic localization length diverges. We show that this can be interpreted as the integer quantum Hall transition at each single valley, even though the magnetic field is absent.