2007/01/31 by K. Kechedzhi, Kostyantyn Kechedzhi, Vladimir I. Fal’ko +4 · 3 citations
Chemistry · Materials Science · Physics and Astronomy · #Asymmetry #Bilayer #Bilayer graphene #Chemistry #Condensed matter physics #Fermi level #Graphene #Graphene research and applications #Image warping #Magnetoresistance #Materials science #Membrane #Monolayer #Nanotechnology #Optics #Optoelectronics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Scattering #Semiconductor #Topological Materials and Phenomena #cond-mat.dis-nn #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.98.176806
published as Phys. Rev. Lett. 98, 176806 (2007) · 4 pages, 1 figure
openalex publication_date 2007/04/26 · arxiv created 2007/05/08 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p\ensuremath→\ensuremath-p asymmetry due to trigonal warping, which suppresses the weak localization effect. We show that weak localization in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.