2007/02/26 by Isao Inoue, I. H. Inoue, Shuichiro Yasuda +4 · 253 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Binary number #Chemical physics #Chemistry #Composite material #Condensed matter physics #Electrical conductor #Electrical resistivity and conductivity #Ferroelectric and Negative Capacitance Devices #Homogeneous #Materials science #Metal #Metallurgy #Metal–insulator transition #Non-blocking I/O #Oxide #Physics #Resistive random-access memory #Thermodynamics #Transition Metal Oxide Nanomaterials #Transition metal #Voltage #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.77.035105
published in Physical Review B 77(3) (American Physical Society) · 7 pages, 5 figures, REVTeX4, submitted to Phys. Rev. B (Feb. 23, 2007). If you can't download a PDF file of this manscript, an alternative one can be found on the author's website: http://staff.aist.go.jp/i.inoue/
arxiv created 2007/02/26 · openalex publication_date 2008/01/03 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Exotic features of a metal/oxide/metal sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwich exhibits a resistance that reversibly switches between two states: one is a highly resistive off state and the other is a conductive on state. Several distinct features were universally observed in these binary TMO sandwiches: namely, nonpolar switching, nonvolatile threshold switching, and current-voltage duality. From the systematic sample-size dependence of the resistance in on and off states, we conclude that the resistance switching is due to the formation of ``electric faucet'' at the interface, which shows up as a homogeneous to inhomogeneous transition of the current distribution.