2013/04/24 by Azar B. Eyvazov, A. B. Eyvazov, Isao H. Inoue +6 · 16 citations
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Charge carrier #Charge-carrier density #Composite material #Condensed matter physics #Doping #Electric field #Electrical engineering #Electron mobility #Electronic and Structural Properties of Oxides #Electronics #Field-effect transistor #Insulator (electricity) #Materials science #Nanotechnology #Optoelectronics #Parylene #Physics #Polymer #Semiconductor materials and devices #Transistor #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1038/srep01721
published in Scientific Reports 3(1) (Nature Portfolio) · Supplementary Information: <http://www.nature.com/srep/2013/130424/srep01721/extref/srep01721-s1.pdf>
openalex publication_date 2013/04/24 · arxiv created 2013/05/07 · arxiv updated 2013/05/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Paraelectrical tuning of a charge carrier density as high as 10 13 cm −2 in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta 2 O 5 hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO 3 , which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to ~10 13 cm −2 carriers, while the field-effect mobility is kept at 10 cm 2 /Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO 3 . Namely, the formation and continuous evolution of field domains and current filaments.