2007/10/31 by J. Y. Jo, S. M. Yang, H. S. Han +12
Engineering · Materials Science · Physics and Astronomy · #Ferroelectric and Negative Capacitance Devices #Ferroelectric and Piezoelectric Materials #Multiferroics and related materials #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.2824839
7 pages, 3 figures
arxiv created 2007/11/21 · openalex publication_date 2008/01/07 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1−x)O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [refer to J. Y. Jo et al., Phys. Rev. Lett. 99, 267602 (2007)]. Based on this analysis, we found that the Zr ion substitution for Ti ions would induce broad distributions in the local field due to defect dipoles, which makes the ferroelectric domain switching occur more easily.