Cryogenic amplifier for fast real-time detection of single-electron tunneling

2007/08/06 by I. T. Vink, T. Nooitgedagt, R. N. Schouten +2 · 4 citations
Physics and Astronomy · #Amplifier #Bandwidth (computing) #Cryogenics #Gallium arsenide #High-electron-mobility transistor #Mechanical and Optical Resonators #Quantum and electron transport phenomena #Quantum point contact #Quantum tunnelling #Semiconductor Quantum Structures and Devices #Shot noise #Transistor #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.2783265

published as Appl. Phys. Lett. 91, 123512 (2007) · 4 pages, 3 figures

arxiv created 2007/08/06 · openalex publication_date 2007/09/17 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

The authors employ a cryogenic high electron mobility transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of 1MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than that of the QPC shot noise. The authors use this setup to monitor single-electron tunneling to and from an adjacent quantum dot. The authors measure fluctuations in the dot occupation as short as 400ns, 20 times faster than in previous work.

Citations

• Charge sensing of excited states in an isolated double quantum dot
• Shot Noise in Mesoscopic Conductors
• Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
• Single-shot read-out of an individual electron spin in a quantum dot

Cited by

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• Site-Selective Quantum Control in an Isotopically Enriched Si<mml:mprescripts/><mml:none/>28/Si0.7Ge0.3 Quadruple Quantum Dot