Site-Selective Quantum Control in an Isotopically Enriched Si<mml:mprescripts/><mml:none/>28/Si0.7Ge0.3 Quadruple Quantum Dot

2019/03/14 by A. J. Sigillito, A.J. Sigillito, J.C. Loy +9
Physics and Astronomy · #Quantum #Quantum and electron transport phenomena #Quantum computer #Quantum dot #Quantum information #Quantum information processing #Quantum sensor #Quantum technology #Qubit #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #Topological Materials and Phenomena #cond-mat.mes-hall #quant-ph

paper · pdf · doi:10.1103/physrevapplied.11.061006

published as Phys. Rev. Applied 11, 061006 (2019)

arxiv created 2019/03/14 · openalex created_date 2019/03/22 · openalex publication_date 2019/06/26 · arxiv updated 2019/07/03 · openalex updated_date 2026/08/05

Abstract

Quantum processors based on spin qubits in silicon offer high-fidelity quantum control, with single- and two-qubit operation approaching the fault-tolerance threshold. Challenges in fabricating and controlling large quantum dot arrays in silicon have limited previous studies to only two qubits. Here the authors build on a scalable device design to fabricate and control all four spin qubits in a quadruple-quantum-dot device. This achievement paves the way to multiqubit quantum information processing in silicon.

Citations

• Cryogenic amplifier for fast real-time detection of single-electron tunneling
• Differential Charge Sensing and Charge Delocalization in a Tunable Double Quantum Dot
• Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
• Spins in few-electron quantum dots
• Single-shot read-out of an individual electron spin in a quantum dot
• Scalable Gate Architecture for a One-Dimensional Array of Semiconductor Spin Qubits
• High-fidelity quantum gates in Si/SiGe double quantum dots
• Fidelity benchmarks for two-qubit gates in silicon