2006/09/30 by Stephan Giglberger, S. Giglberger, L. E. Golub +14 · 3 citations
Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.75.035327
9 pages, 6 figures
arxiv created 2006/10/02 · openalex publication_date 2007/01/18 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin splitting in (001)-grown GaAs and InAs based two dimensional electron systems. We observed that shifting the \ensuremathδ-doping plane from one side of the quantum well to the other results in a change of sign of the photocurrent caused by Rashba spin splitting while the sign of the Dresselhaus term induced photocurrent remains. The measurements give the necessary feedback for technologists looking for structures with equal Rashba and Dresselhaus spin splittings or perfectly symmetric structures with zero Rashba constant.