2009/03/21 by P. Olbrich, Peter Olbrich, J. Allerdings +12 · 21 citations
Physics and Astronomy · #Condensed matter physics #Dephasing #Doping #Excitation #Luminescence #Optics #Photocurrent #Physics #Quantum and electron transport phenomena #Quantum mechanics #Quantum optics and atomic interactions #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.79.245329
published in Physical Review B 79(24) (American Physical Society) · 11 pages, 12 figures
arxiv created 2009/03/21 · openalex publication_date 2009/06/26 · arxiv updated 2015/05/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report the magnetogyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation in the radiation-polarization state, magnetic field orientation, and temperature is studied. The developed theory of MPGE describes well all experimental results. It is demonstrated that the structure inversion asymmetry can be controllably tuned to zero by variation in the delta-doping layer positions. For the in-plane magnetic field the photocurrent is only observed in asymmetric structures but vanishes in symmetrically doped QWs. Applying time-resolved Kerr rotation and polarized luminescence we investigate the spin relaxation in QWs for various excitation levels. Our data confirm that in symmetrically doped QWs the spin-relaxation time is maximal; therefore, these structures set the upper limit of spin dephasing in GaAs/AlGaAs QWs.