Fano resonance in electron transport through parallel double quantum dots in the Kondo regime

2004/12/31 by Guo-Hui Ding, Chul Koo Kim, C. K. Kim +2
Computer Science · Physics and Astronomy · #Quantum Information and Cryptography #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.71.205313

15 pages, 5 figures

arxiv created 2005/02/16 · openalex publication_date 2005/05/24 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Electron transport through parallel double quantum dot system with interdot tunneling and strong on-site Coulomb interaction is studied in the Kondo regime by using the finite-U slave boson technique. For a system of quantum dots with degenerate energy levels, the linear conductance reaches the unitary limit (2e²∕h) due to the Kondo effect at low temperature when interdot tunneling is absent. As the interdot tunneling amplitude increases, the conductance decreases in the singly occupied regime and a conductance plateau structure appears. In the crossover to the doubly occupied regime, the conductance increases to reach a maximum value of G=2e²∕h. For parallel double dots with different energy levels, we show that the interference effect plays an important role in electron transport. The linear conductance is shown to have an asymmetric line shape of the Fano resonance as a function of gate voltage.

Citations

• Phase Evolution in a Kondo-Correlated System
• Kondo effect and antiferromagnetic correlation in transport through tunneling-coupled double quantum dots
• Temperature dependence of Fano line shapes in a weakly coupled single-electron transistor
• Fano resonance in a quantum wire with a side-coupled quantum dot
• Interference effects in the conductance of multilevel quantum dots
• Effects of Configuration Interaction on Intensities and Phase Shifts