2000/09/30 by I. G. Zacharia, Ian G. Zacharia, D. Goldhaber-Gordon +7 · 2 citations
Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.64.155311
published as Phys. Rev. B 64, 155311 (2001) · 6 pages, 4 figures. New references have been added to support the analysis
arxiv created 2001/06/02 · openalex publication_date 2001/09/18 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30
We report the temperature dependence of the zero-bias conductance of a single-electron transistor in the regime of weak coupling between the quantum dot and the leads. The Fano line shape, convoluted with thermal broadening, provides a good fit to the observed asymmetric Coulomb charging peaks. However, the width of the peaks increases more rapidly than expected from the thermal broadening of the Fermi distribution in a temperature range for which Fano interference is unaffected. The intrinsic width of the resonance extracted from the fits increases approximately quadratically with temperature. Above about 600 mK the asymmetry of the peaks decreases, suggesting that phase coherence necessary for Fano interference is reduced.