2004/11/30 by B. Andrei Bernevig, Shou-Cheng Zhang · 3 citations
Physics and Astronomy · #Condensed matter physics #Electron #Fermi gas #Hall effect #Impurity #Magnetic field #Magnetic properties of thin films #Physics #Point reflection #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum spin Hall effect #Scattering #Semiconductor #Spin (aerodynamics) #Spin Hall effect #Spin polarization #Topological Materials and Phenomena #cond-mat.other
paper · pdf · doi:10.1103/physrevlett.95.016801
published as Phys. Rev. Lett. 95, 016801 (2005) · Minor typos fixed, one reference added
arxiv created 2004/12/03 · openalex publication_date 2005/06/29 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We show that two types of spin-orbit coupling in the 2 dimensional hole gas, with and without inversion symmetry breaking, contribute to the intrinsic spin-Hall effect. Furthermore, the vertex correction due to impurity scattering vanishes in both cases, in sharp contrast to the case of usual Rashba coupling in the electron band. Recently, the spin-Hall effect in a hole doped GaAs semiconductor has been observed experimentally by Wunderlich et al. [ Phys. Rev. Lett. 94, 047204 (2005).]. From the fact that the lifetime broadening is smaller than the spin splitting, and the fact impurity vertex corrections vanish in this system, we argue that the observed spin-Hall effect should be in the intrinsic regime.