Molecular Beam Epitaxy of SnSe2: Chemistry and Electronic Properties of Interfaces

1993/03/01 by Toshihiro Shimada, Fumio S. Ohuchi, Atsushi Koma
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #2D Materials and Applications #Semiconductor materials and interfaces

paper · doi:10.1143/jjap.32.1182

Abstract

A layered material SnSe 2 was grown epitaxially on various layered materials (MoS 2 , NbSe 2 , graphite), while reacting with Al 2 O 3 (0001) substrates. The films were characterized by means of X-ray photoemission spectroscopy, reflection high energy electron diffraction, and scanning tunneling microscopy. The observed band bending was consistent to the work function difference between the film and the substrate, indicating the Schottky limit property of the junctions. Applications of this system are discussed.

Citations

• The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

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