New approach for the molecular beam epitaxy growth of scalable single-crystalline WSe₂ monolayers

2019/10/17 by Vergnaud, Céline, Dau, Minh-Tuan, Grévin, Benjamin +4
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)

paper · doi:10.48550/arxiv.1910.08097

Abstract

The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecular beam epitaxy to grow 15×15 mm large WSe₂ on mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature (>900^∘C) and very low deposition rate (

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