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All-Inkjet-Printed Organic Thin-Film Transistors with Silver Gate, Source/Drain Electrodes

2011/03/01 by Seungjun Chung, Jongsu Jang, Junhee Cho +4 · 1 citation
Engineering · #Nanomaterials and Printing Technologies #Thin-Film Transistor Technologies #Organic Electronics and Photovoltaics

paper · doi:10.7567/jjap.50.03cb05

Abstract

We report high-performance all-inkjet-printed organic thin-film transistors (OTFTs), where inkjet-printed silver electrodes, cross-linked poly(4-vinylphenol) (PVP) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) were used as gate/source/drain electrodes, a gate dielectric layer and an active semiconductor layer, respectively. To evaluate quality of the active semiconductor layer, we also fabricated OTFTs by using spin-coating and drop-casting methods for TIPS-pentacene layer on the inkjet-printed PVP gate dielectric layer. Comparable TFT electrical performances were obtained and well-crystallized TIPS-pentacene layer was formed for all cases. All TIPS-pentacene OTFTs show lower sub-threshold swing values than OTFTs with an evaporated pentacene active semiconductor layer on the inkjet-printed PVP gate dielectric layer. By using optimized inkjet-printing conditions, we obtained mobility of 0.06 cm2 V-1 s-1 and on/off ratio of 104 for all-inkjet-printed OTFT.

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