2020/11/24 by Tian Carey, Adrees Arbab, Carey, Tian +27
Engineering · Materials Science · #2D Materials and Applications #Advanced Memory and Neural Computing #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · pdf · doi:10.48550/arxiv.2011.12359
openalex publication_date 2020/11/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-dimensional materials have the potential to enable the next generation of high performance, low-cost printed digital electronics. Here we demonstrate air-stable, low voltage (< 5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2) and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating a switching time of τ ~ 3.3 μs for the MoS2 FETs. We achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. We then integrate MoS2 and IDT-BT FETs to realise inkjet-printed complementary logic inverters with a voltage gain |Av| ~ 4 when in resistive load configuration and |Av| ~ 1.36 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.