Metal-nanoparticle single-electron transistors fabricated using electromigration

2003/10/24 by K. I. Bolotin, F. Kuemmeth, A. N. Pasupathy +1 · 3 citations
Engineering · Materials Science · Physics and Astronomy · #Gold and Silver Nanoparticles Synthesis and Applications #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #cond-mat

paper · pdf · doi:10.1063/1.1695203

published as K.I. Bolotin et al, APL 84, 3154 (2004) · 3 pages, 3 figures, submitted to APL

arxiv created 2003/10/24 · openalex publication_date 2004/04/12 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten charge states of individual gold nanoparticles (5–15 nm in diameter). The devices are sufficiently stable to permit spectroscopic studies of the electron-in-a-box level spectra within the nanoparticle as its charge state is varied.

Citations

• Coulomb blockade of single-electron tunneling, and coherent oscillations in small tunnel junctions
• Gate-Voltage Studies of Discrete Electronic States in Aluminum Nanoparticles

Cited by

• Multi-island single-electron devices from self-assembled colloidal nanocrystal chains
• Controlled fabrication of single electron transistors from single-walled carbon nanotubes
• Electronic and optical properties of electromigrated molecular junctions