2008/04/30 by Paul Stokes, Saiful I. Khondaker · 1 citation
Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Carbon nanotube #Carbon nanotube quantum dot #Coulomb blockade #Diamond and Carbon-based Materials Research #Electron #Fabrication #Field-effect transistor #Nanoelectronics #Quantum and electron transport phenomena #Transistor #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.2955520
published as APL 92, 262107 (2008) · 5 pages, 3 figures
arxiv created 2008/06/16 · openalex publication_date 2008/06/30 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Single electron transistors (SETs) are fabricated by placing single-walled carbon nanotubes (SWNTs) on a 100nm wide local Al∕Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125K were observed and charging energies of 12–15meV with level spacing of ∼5meV were measured from the Coulomb diamond, in agreement with a dot size of ∼100nm, implying that the local gate defines the dot size by bending SWNT at the edges and controls its operation. This “mechanical template” approach may facilitate large scale fabrication of SET devices using SWNT.