Gate-Voltage Studies of Discrete Electronic States in Aluminum Nanoparticles

1997/01/12 by D. C. Ralph, C. T. Black, M. Tinkham · 12 citations
Engineering · Physics and Astronomy · #Advanced Chemical Physics Studies #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.supr-con

paper · pdf · doi:10.1103/physrevlett.78.4087

4 pages, 7 figures

arxiv created 1997/01/12 · openalex publication_date 1997/05/26 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We have investigated the spectrum of discrete electronic states in single, nm-scale Al particles incorporated into new tunneling transistors, complete with a gate electrode. The addition of the gate has allowed (a) measurements of the electronic spectra for different numbers of electrons in the same particle, (b) greatly improved resolution and qualitatively new results for spectra within superconducting particles, and (c) detailed studies of the gate-voltage dependence of the resonance level widths, which have directly demonstrated the effects of nonequilibrium excitations.

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