Spin-Dependent Transport through an Interacting Quantum Dot

2002/10/10 by Ping Zhang, Qi-Kun Xue, Qi‐Kun Xue +3 · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Magnetic properties of thin films #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.89.286803

9 pages, 5 figures

arxiv created 2002/10/10 · openalex publication_date 2002/12/31 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We study the nonequilibrium spin transport through a quantum dot coupled to the magnetic electrodes. A formula for the spin-dependent current is obtained and is applied to discuss the linear conductance and magnetoresistance in the interacting regime. We show that the Kondo resonance and the correlation-induced spin splitting of the dot levels may be systematically controlled by internal magnetization in the electrodes. As a result, when the electrodes are in parallel magnetic configuration, the linear conductance is characterized by two spin-resolved peaks. Furthermore, the presence of the spin-flip process in the dot splits the Kondo resonance into three peaks.

Citations

• Fano and Kondo Resonance in Electronic Current through Nanodevices
• Low Temperature Transport through a Quantum Dot: The Anderson Model out of Equilibrium
• Landauer formula for the current through an interacting electron region
• Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime
• Spin relaxation in semiconductor quantum dots

Cited by

• Kondo-type transport through an interacting quantum dot coupled to ferromagnetic leads
• Exchange effects on electron scattering through a quantum dot embedded in a two-dimensional semiconductor structure