1999/08/31 by X. H. Wang, Arne Brataas, A. Brataas · 2 citations
Physics and Astronomy · #Magnetic properties of thin films #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.83.5138
published as PRL 83, 5138 (1999) · updated version
arxiv created 1999/12/11 · openalex publication_date 1999/12/13 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the low-order sequential tunneling and cotunneling regimes, a large magnetoresistance ratio at sufficiently low temperatures is found. In the opposite limit, when the thermal energy is larger than the charging energy, the magnetoresistance ratio is only slightly enhanced.