1999/07/23 by Alexander Khaetskii, Alexander V. Khaetskii, Yuli V. Nazarov · 14 citations
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.61.12639
published as Phys. Rev. B, v.61, 12639 (2000). · 6 pages, RevTex
arxiv created 1999/07/23 · openalex publication_date 2000/05/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have studied spin-flip processes in GaAs electron quantum dots that accompany transitions between different discrete energy levels. Several different mechanisms that originate from spin-orbit coupling are shown to be responsible for such processes. We have evaluated the rates for all mechanisms with and without a magnetic field. We have shown that the spin relaxation of the electrons localized in the dots differs strikingly from that of the delocalized electrons. The most effective spin-flip mechanisms related to the absence of the inversion symmetry appear to be strongly suppressed for localized electrons. This results in unusually low spin-flip rates.