Charge Transfer Dynamics in an Electron-Hole Bilayer Device: Capacitance Oscillations and Hysteretic Behavior

2025/04/25 by M. L. Davis, S. Parolo, Davis, Miranda Leigh +9
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and interfaces

paper · pdf · doi:10.48550/arxiv.2504.18627

openalex publication_date 2025/04/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The capacitance and differential conductance of MBE-grown AlGaAs/GaAs p-i-n diodes are investigated. In these diodes, the p-doped layer, an adjacent intrinsic spacer, and a central barrier are made of AlGaAs. Capacitance oscillations and hysteretic behavior are observed and understood to be consequences of the AlGaAs spacer properties. These findings have significant implications for the design of heterostructures aimed at achieving electrically contacted, closely spaced electron and hole layers.

Citations

• Quasi-condensation of bilayer excitons in a periodic potential
• A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs systems
• High-temperature superfluidity with indirect excitons in van der Waals heterostructures
• Coherence and Optical Emission from Bilayer Exciton Condensates
• Coulomb Drag in the Exciton Regime in Electron-Hole Bilayers

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