Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect

2006/06/20 by R. G. Mani, W. B. Johnson, Mani, R. G. +7
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.cond-mat/0606517

arxiv created 2006/06/20 · arxiv updated 2009/12/01

Abstract

An experimental study of the high mobility GaAs/AlGaAs system at large-ν indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and suggests a new class of integral quantum Hall effect, which is characterized by "anti-phase" Hall- and diagonal- resistance oscillations.

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